Theoretical Study about the formation of the stacking faults in GaN nanowires along different growth directions
文献类型：会议论文
| 作者 | Zhang, JP (张锦平) ; Yang, H (杨辉); Xu, K (徐科); Gong, XJ (弓晓晶); Gong, XJ (弓晓晶)
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| 出版日期 | 2011 |
| 会议名称 | International Conference on Computational Materials Science |
| 会议日期 | APR 17-18, 2011 |
| 会议地点 | Guangzhou, PEOPLES R CHINA |
| 关键词 | Gallium nitride nanowire stacking faults molecular dynamics simulations |
| 通讯作者 | Gong, XJ (弓晓晶) |
| 英文摘要 | Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway. |
| 收录类别 | CPCI（ISTP） ; EI |
| 语种 | 英语 |
| 源URL | [http://58.210.77.100/handle/332007/671]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Gong, XJ (弓晓晶); Gong, XJ (弓晓晶) |
| 推荐引用方式 GB/T 7714 | Zhang, JP ,Yang, H ,Xu, K ,et al. Theoretical Study about the formation of the stacking faults in GaN nanowires along different growth directions[C]. 见:International Conference on Computational Materials Science. Guangzhou, PEOPLES R CHINA. APR 17-18, 2011. |
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