Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure
文献类型：期刊论文
| 作者 | Zeng, CH (曾春红) ; Zhang, BS (张宝顺); Qin, H (秦华); Cai, Y (蔡勇); Cai, Y (蔡勇); Shi, WH (时文华)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2011-07 |
| 卷号 | 28期号:7 |
| 通讯作者 | Cai, Y (蔡勇) |
| 英文摘要 | A nano-channel array (NCA) structure is applied to realize enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs). The fabricated NCA-HEMT, consisting of 1000 channels connected in parallel with a channel width of 64 nm, shows a threshold voltage of 0.15V and a subthreshold slope of 78mV/dec, compared to -3.92V and 99mV/dec for a conventional HEMT (C-HEMT), respectively. Both the NCA-HEMT and C-HEMT show similar gate leakage current, indicating no significant degradation in gate leakage characteristics for the NCA-HEMT. The surrounding-field effect and relieved polarization contribute to the very large positive threshold voltage shift, while the work function difference makes it positive. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000293141800071 |
| 公开日期 | 2012-08-24 |
| 源URL | [http://58.210.77.100/handle/332007/639]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Cai, Y (蔡勇); Cai, Y (蔡勇) |
| 推荐引用方式 GB/T 7714 | Zeng, CH ,Zhang, BS ,Qin, H ,et al. Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure[J]. CHINESE PHYSICS LETTERS,2011,28(7). |
| APA | Zeng, CH ,Zhang, BS ,Qin, H ,Cai, Y ,Cai, Y ,&Shi, WH .(2011).Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure.CHINESE PHYSICS LETTERS,28(7). |
| MLA | Zeng, CH ,et al."Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure".CHINESE PHYSICS LETTERS 28.7(2011). |
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