High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films
文献类型：期刊论文
| 作者 | Feng Zhang ; Guosheng Sun ; Huolin Huang ; Zhengyun Wu ; Lei Wang ; Wanshun Zhao ; Xingfang Liu ; Guoguo Yan ; Liu Zheng ; Lin Dong ; Yiping Zeng |
| 刊名 | ieee electron device letters
 |
| 出版日期 | 2011-12 |
| 卷号 | 32期号:12页码:1722 |
| 关键词 | Metal–insulator–semiconductor (MIS) devices photodetectors ultraviolet (UV) detectors |
| 通讯作者 | feng zhang |
| 合作状况 | 国内 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2012-09-04 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23339]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Feng Zhang,Guosheng Sun,Huolin Huang,et al. High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films[J]. ieee electron device letters,2011,32(12):1722. |
| APA | Feng Zhang.,Guosheng Sun.,Huolin Huang.,Zhengyun Wu.,Lei Wang.,...&Yiping Zeng.(2011).High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films.ieee electron device letters,32(12),1722. |
| MLA | Feng Zhang,et al."High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films".ieee electron device letters 32.12(2011):1722. |
入库方式： OAI收割
来源：半导体研究所
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