The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon
文献类型：期刊论文
| 作者 | Yang, J. J.1; Liu, B.1; Liao, X. D.1; Jiao, G. H.2; Xu, K. W.3 |
| 刊名 | rare metal materials and engineering
 |
| 出版日期 | 2012-02-01 |
| 卷号 | 41期号:s1页码:120-123 |
| 关键词 | Zr-Ge-N films diffusion barrier micro-structural thermal stability |
| ISSN号 | 1002-185x |
| 产权排序 | 2 |
| 合作状况 | 国内 |
| 英文摘要 | the main purpose of the present micro-structural analysis by transmission electron microscopy (tem) and x-ray diffraction (xrd) was to investigate whether amorphous zr-ge-n films are a potential candidate as a diffusion barrier for cu wiring used in si devices. the zr-ge-n films were prepared by a radio frequency (rf) reactive magnetron sputter-deposition technique using n-2 and ar mixed gas, and the film structure was found to be sensitive to the gas flow ratio of n-2 vs. ar during sputtering. polycrystalline zr-ge-n films were obtained when the n-2/(ar+n-2) ratio was smaller than 0.2 and amorphous-like zr-ge-n films were obtained when the ratio was larger than 0.3. diffusion barrier test was performed by annealing the cu/zr-ge-n/si film stack under ar atmosphere. the deposited zr-ge-n(c) films remained amorphous even after high temperature annealing. the cu diffusion profile in the film was assessed by the auger electron spectroscopy (aes). the results indicate that cu diffusion was minimal in amorphous zr-ge-n(c) films even at high annealing temperatures of 800 degrees c. |
| WOS标题词 | science & technology ; technology |
| 学科主题 | materials science ; multidisciplinary ; metallurgy & metallurgical engineering |
| 类目[WOS] | materials science, multidisciplinary ; metallurgy & metallurgical engineering |
| 研究领域[WOS] | materials science ; metallurgy & metallurgical engineering |
| 关键词[WOS] | si ; metallization ; interconnects ; behavior |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000303635900028 |
| 公开日期 | 2012-09-07 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/20383]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China 2.CAS, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710049, Peoples R China 3.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, J. J.,Liu, B.,Liao, X. D.,et al. The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon[J]. rare metal materials and engineering,2012,41(s1):120-123. |
| APA | Yang, J. J.,Liu, B.,Liao, X. D.,Jiao, G. H.,&Xu, K. W..(2012).The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon.rare metal materials and engineering,41(s1),120-123. |
| MLA | Yang, J. J.,et al."The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon".rare metal materials and engineering 41.s1(2012):120-123. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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