自支撑GaN基核辐射探测器的Ⅰ-V特性研究
文献类型：期刊论文
| 作者 | 付凯
|
| 刊名 | 固体电子学研究与进展
 |
| 出版日期 | 2011-12-25 |
| 期号 | 6 |
| 关键词 | 自支撑氮化镓电流-电压特性 PL谱图 |
| 中文摘要 | 使用自支撑GaN基材料制备了Schottky结构核辐射探测器,研究了探测器不同偏压扫描下的I-V特性。偏压从零偏向正偏扫描和从正偏向零偏扫描的I-V特性曲线并不重合;偏压从零偏向反偏扫描和从反偏向零偏扫描的曲线不重合性并没有正偏明显。测试并分析了PL谱图,得出I-V特性曲线不重合的原因是:从零偏到正偏的导电机制是热生载流子,正偏到零偏的导电机制是大注入的非平衡载流子。 |
| 英文摘要 | Free standing GaN-based Schottky nuclear radiation detector has been fabricated,and I-V characteristics of the detector have been studied under different bias voltages.I-V characteristics curves scaning from forward bias to zero are not coincident with from zero to forward bias,while current change scaning from zero bias to forward are not so evident as from forward bias to zero.PL spectrum are measured and analysed,furthermore,it is concluded that noncoincidence of I-V characteristics curves is due to the different current transport mechanism which is considered to be thermal equilibrium carrier as scaning from reverse bias to zero but high-level injection of non-equilibrium carriers as scaning from forward bias to zero. |
| 语种 | 中文 |
| 公开日期 | 2012-09-11 |
| 源URL | [http://58.210.77.100/handle/332007/743]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | 付凯. 自支撑GaN基核辐射探测器的Ⅰ-V特性研究[J]. 固体电子学研究与进展,2011(6). |
| APA | 付凯.(2011).自支撑GaN基核辐射探测器的Ⅰ-V特性研究.固体电子学研究与进展(6). |
| MLA | 付凯."自支撑GaN基核辐射探测器的Ⅰ-V特性研究".固体电子学研究与进展 .6(2011). |
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