In组分对InGaN/GaN蓝光LED的发光性质的影响
文献类型：期刊论文
| 作者 | 张锦平 ; 周桃飞
|
| 刊名 | 光学学报
 |
| 出版日期 | 2011-10-10 |
| 期号 | 10 |
| 关键词 | 材料 InGaN/GaN 扫描透射电子显微术 光致发光光谱 带填充 |
| 中文摘要 | 利用扫描透射电子显微术(STEM)和变温光致发光光谱(PL)研究了In组分对InGaN/GaN蓝光LED的发光的影响。STEM发现两个样品量子阱结构相同,低温PL显示低In组分的样品的发光峰位随着温度的升高呈现出经典S(Red-Blue-Red)曲线。目前普遍认为蓝移是In组分分布不均匀造成的局域激子发光的主要原因,然而实验发现高In组分没有出现峰位蓝移,产生这一异常现象的原因主要是因为高In组分造成的势起伏较大,在80K～160K条件下造成很大的热势垒,从而阻碍了载流子从强束缚局域态向弱束缚局域态的跃迁。同时,在高温段160K～300K载流子的带填充过程在峰位蓝移方面起主要作用。这是由于高In样品的量子限制效应较低In组分的明显,导致高温段峰位整体红移减小。 |
| 英文摘要 | Scanning transmission electron microscopy(STEM) and temperature dependent photoluminescence(PL) measurement are used to study the influence of In fraction on the optical properties of InGaN/ GaN blue light-emitting diode(LED).STEM results reveal that both of two samples have the same quantum-well structure.Low-temperature dependence of PL shows that the peak energy of one sample with lower In fraction exhibites a classical S type(Red-Blue-Red) with increasing temperature.Currently it is recommended that the blue shift of peak energy(with increasing temperature) is mainly due to exciton recombination,which is caused by inhomogeneous In distribution.However,the sample with higher In fraction doesn′t show any blue shift about the peak energy.This unnormal phenomenon can be mainly attributed to the large thermal barrier caused by potential fluctuation of high In composition,which prohibits carriers transition from strong localized state into weak localized state(this process can cause blue shift of energy).Meanwhile,band filling process of carriers becomes prominent in the role of energy blue shift from 160 K to 300 K,this can be attributed to the more obvious quantum confined effect in higher In fraction sample,compared with lower In fraction,resulting in smaller average red shift of peak energy. |
| 语种 | 中文 |
| 公开日期 | 2012-09-17 |
| 源URL | [http://58.210.77.100/handle/332007/766]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | 张锦平,周桃飞. In组分对InGaN/GaN蓝光LED的发光性质的影响[J]. 光学学报,2011(10). |
| APA | 张锦平,&周桃飞.(2011).In组分对InGaN/GaN蓝光LED的发光性质的影响.光学学报(10). |
| MLA | 张锦平,et al."In组分对InGaN/GaN蓝光LED的发光性质的影响".光学学报 .10(2011). |
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