Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O-3 thin films using MOD process
文献类型：期刊论文
| 作者 | Song, ZT ; Gao, JX ; Zhu, XR ; Wang, LW ; Fu, XR ; Lin, CL |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2001 |
| 卷号 | 36期号:17页码:4285 |
| ISSN号 | 0022-2461 |
| 英文摘要 | Pb(Zr0.48Ti0.52)O-3 thin films at 20% excess Pb were synthesized on Pt/Ti/SiO2/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO2 phase. The PbO2 phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO2 phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films. (C) 2001 Kluwer Academic Publishers. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000170554700028 |
| 公开日期 | 2012-09-25 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/9950]  |
| 专题 | 上海应用物理研究所_中科院上海原子核所2003年前 |
| 推荐引用方式 GB/T 7714 | Song, ZT,Gao, JX,Zhu, XR,et al. Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O-3 thin films using MOD process[J]. JOURNAL OF MATERIALS SCIENCE,2001,36(17):4285. |
| APA | Song, ZT,Gao, JX,Zhu, XR,Wang, LW,Fu, XR,&Lin, CL.(2001).Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O-3 thin films using MOD process.JOURNAL OF MATERIALS SCIENCE,36(17),4285. |
| MLA | Song, ZT,et al."Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O-3 thin films using MOD process".JOURNAL OF MATERIALS SCIENCE 36.17(2001):4285. |
入库方式： OAI收割
来源：上海应用物理研究所
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