中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond

文献类型:期刊论文

作者Lu, RR(陆嵘嵘) ; Manfredotti, C ; Fizzotti, F ; Vittone, E ; Logiudice, A
刊名MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
出版日期2002
卷号90期号:40910页码:191
ISSN号0921-5107
英文摘要A lateral micro-ion beam induced charge technique has been used to obtain the charge collection efficiency (CCE) profiles at different biases applied on the growth electrode of chemical vapor deposition (CVD) diamond. A new linear model, only related to characteristic parameters (mobility x lifetime product) of CVD diamond, was reasonably proposed and checked by fitting the CCE profile. The results confirm that: (1) this CVD diamond is similar to a n-p junction film with bulk volume p type on the substrate side at the positive bias applied on the growth side; (2) in the case of negative bias, space charge on both sides may arise from donors/acceptors of the film and electrons/holes injected from the growth/ substrate side, but in the middle no space charge exists due to the electron-hole neutralization. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
WOS记录号WOS:000174019500036
公开日期2012-09-25
源URL[http://ir.sinap.ac.cn/handle/331007/10034]  
专题上海应用物理研究所_中科院上海原子核所2003年前
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Lu, RR,Manfredotti, C,Fizzotti, F,et al. Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2002,90(40910):191.
APA Lu, RR,Manfredotti, C,Fizzotti, F,Vittone, E,&Logiudice, A.(2002).Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,90(40910),191.
MLA Lu, RR,et al."Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 90.40910(2002):191.

入库方式: OAI收割

来源:上海应用物理研究所

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