Mesoscopic kinetics of nonequilibrium solidification
文献类型:期刊论文
作者 | Cai, YW(蔡英文) ; Zhang, GL(张国亮) ; Fu, HZ |
刊名 | JOURNAL OF APPLIED PHYSICS
![]() |
出版日期 | 2000 |
卷号 | 87期号:11页码:7735 |
ISSN号 | 0021-8979 |
英文摘要 | Disadvantages of Aziz interface partition model [J. Appl. Phys. 53, 1158 (1982)] are summarized in this article. Using transition state theory and Maxwell-Boltzmann distribution law, a mesoscopic solute partition model (MPM) including multilayer interface for dilute solution is put forward. It is shown that the static interface structure and roughening behavior have significant effects on solute partitioning. Both the partition processes of semiconductors and metals can be explained by MPM rationally. The Aziz model is just a particular case of MPM for monolayer interface without roughening before complete trapping occurs. Comparisons of MPM with experimental results in Si (As, Ge, Bi, Sn) and Al(Cu, Sn, Ge, In) show pretty good agreement, provided an educated speculation of interface roughening behavior is given. Also in MPM, it is pointed out that interface diffusivity D-i correlates with the interface scale. For semiconductors with an atomic sharp solid/liquid interface, D-i is close to D-L, the diffusivity of bulk liquid. On the other hand, for metals with a diffuse interface, D-i can be orders of magnitude lower than D-L, to some extent estimated by root DSDL, the geometric mean of the diffusivity of bulk solid and liquid. (C) 2000 American Institute of Physics. [S0021-8979(00)05411-6]. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000087067400019 |
公开日期 | 2012-09-25 |
源URL | [http://ir.sinap.ac.cn/handle/331007/10057] ![]() |
专题 | 上海应用物理研究所_中科院上海原子核所2003年前 |
推荐引用方式 GB/T 7714 | Cai, YW,Zhang, GL,Fu, HZ. Mesoscopic kinetics of nonequilibrium solidification[J]. JOURNAL OF APPLIED PHYSICS,2000,87(11):7735. |
APA | Cai, YW,Zhang, GL,&Fu, HZ.(2000).Mesoscopic kinetics of nonequilibrium solidification.JOURNAL OF APPLIED PHYSICS,87(11),7735. |
MLA | Cai, YW,et al."Mesoscopic kinetics of nonequilibrium solidification".JOURNAL OF APPLIED PHYSICS 87.11(2000):7735. |
入库方式: OAI收割
来源:上海应用物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。