Study of the ion implantation of Sn-119 in a-Si1-xCx : H
文献类型：期刊论文
| 作者 | Barancira, T ; Moons, R ; Koops, GEJ ; Deweerd, W ; Pattyn, H ; Tzenov, N ; Tzolov, M ; Dimova-Malinovska, D ; Tsvetkova, T ; Venegas, R ; Zhang, GL（张桂林） |
| 刊名 | JOURNAL OF NON-CRYSTALLINE SOLIDS
 |
| 出版日期 | 1999 |
| 卷号 | 244期号:40942页码:189 |
| ISSN号 | 0022-3093 |
| 英文摘要 | The Mossbauer spectroscopy and Rutherford backscattering spectroscopy studies presented here allow an investigation of the origins of the previously observed changes in optical absorption in sputter deposited a-Si1-xCx:H films caused by high dose Sn implantations. To this end, we investigate the microscopic surroundings and the bonding structures of the Sn atoms. At doses up to 1 x 10(17) cm(-2) a major fraction of Sn takes a quasi-substitutional site, sp(3) bonded to four Si neighbours, while a smaller fraction is present as Sn2+, presumably due to SnO formation. The latter fraction increases at the higher doses and the increase is paralleled by the formation of Sn4+ and a prominent metallic sn component. This beta-Sn fraction, presumably in the form of nanosized precipitates, becomes dominant at the higher doses, thus explaining the complete lack of optical transmission. (C) 1999 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000079509900010 |
| 公开日期 | 2012-09-25 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/10189]  |
| 专题 | 上海应用物理研究所_中科院上海原子核所2003年前 |
| 推荐引用方式 GB/T 7714 | Barancira, T,Moons, R,Koops, GEJ,et al. Study of the ion implantation of Sn-119 in a-Si1-xCx : H[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,1999,244(40942):189. |
| APA | Barancira, T.,Moons, R.,Koops, GEJ.,Deweerd, W.,Pattyn, H.,...&Zhang, GL.(1999).Study of the ion implantation of Sn-119 in a-Si1-xCx : H.JOURNAL OF NON-CRYSTALLINE SOLIDS,244(40942),189. |
| MLA | Barancira, T,et al."Study of the ion implantation of Sn-119 in a-Si1-xCx : H".JOURNAL OF NON-CRYSTALLINE SOLIDS 244.40942(1999):189. |
入库方式： OAI收割
来源：上海应用物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。