中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy

文献类型:期刊论文

作者Chen, CB ; Lu, W ; Miao, ZL ; Li, ZF ; Cai, WY ; Shen, XC ; Chen, CM(陈明昌) ; Zhu, DZ(朱德彰) ; Hu, J(胡钧) ; Li, MQ(李民乾)
刊名ACTA PHYSICA SINICA
出版日期2002
卷号51期号:3页码:659
ISSN号1000-3290
收录类别SCI
语种英语
公开日期2012-09-25
源URL[http://ir.sinap.ac.cn/handle/331007/10196]  
专题上海应用物理研究所_中科院上海原子核所2003年前
推荐引用方式
GB/T 7714
Chen, CB,Lu, W,Miao, ZL,et al. Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy[J]. ACTA PHYSICA SINICA,2002,51(3):659.
APA Chen, CB.,Lu, W.,Miao, ZL.,Li, ZF.,Cai, WY.,...&Li, MQ.(2002).Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy.ACTA PHYSICA SINICA,51(3),659.
MLA Chen, CB,et al."Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy".ACTA PHYSICA SINICA 51.3(2002):659.

入库方式: OAI收割

来源:上海应用物理研究所

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