Behavior of ar plasma formed in a high-density plasma source - an ecr reactor
文献类型：期刊论文
| 作者 | Wu HM(吴汉明); Graves DB; Porteous RK; Li M |
| 刊名 | Acta Physica Sinica-Overseas Edition
 |
| 出版日期 | 1994 |
| 卷号 | 3期号:10页码:746-757 |
| ISSN号 | 1004-423X |
| 通讯作者 | WU, HM (reprint author), ACAD SINICA,INST MECH,BEIJING 100080,PEOPLES R CHINA. |
| 合作状况 | 国内 |
| 中文摘要 | In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements. |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 收录类别 | SCI |
| 原文出处 | http://iopscience.iop.org/1004-423X/3/10/004 |
| 语种 | 英语 |
| WOS记录号 | WOS:A1994QD25800004 |
| 公开日期 | 2009-08-03 ; 2010-08-20 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/39274]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Wu HM,Graves DB,Porteous RK,et al. Behavior of ar plasma formed in a high-density plasma source - an ecr reactor[J]. Acta Physica Sinica-Overseas Edition,1994,3(10):746-757. |
| APA | Wu HM,Graves DB,Porteous RK,&Li M.(1994).Behavior of ar plasma formed in a high-density plasma source - an ecr reactor.Acta Physica Sinica-Overseas Edition,3(10),746-757. |
| MLA | Wu HM,et al."Behavior of ar plasma formed in a high-density plasma source - an ecr reactor".Acta Physica Sinica-Overseas Edition 3.10(1994):746-757. |
入库方式： OAI收割
来源：力学研究所
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