中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate

文献类型:期刊论文

作者Li Y.F.; Shen D.Z.; Zhang Z.Z.; Li B.H.
刊名Faguang Xuebao/Chinese Journal of Luminescence
出版日期2010
卷号31期号:6页码:854-858
ISSN号10007032
其他题名论文其他题名
收录类别EI
公开日期2012-10-21
源URL[http://ir.ciomp.ac.cn/handle/181722/24473]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Li Y.F.,Shen D.Z.,Zhang Z.Z.,et al. Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate[J]. Faguang Xuebao/Chinese Journal of Luminescence,2010,31(6):854-858.
APA Li Y.F.,Shen D.Z.,Zhang Z.Z.,&Li B.H..(2010).Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate.Faguang Xuebao/Chinese Journal of Luminescence,31(6),854-858.
MLA Li Y.F.,et al."Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate".Faguang Xuebao/Chinese Journal of Luminescence 31.6(2010):854-858.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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