中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Infrared-laser-induced upconversion from Nd3+: LaF3 heteroepitaxial layers on CaF2(111) substrates by molecular beam epitaxy

文献类型:期刊论文

作者Zhang X.; Zhang X.; Zhang X.
刊名Physical Review B
出版日期2000
卷号62期号:7页码:4446-4454
ISSN号0163-1829
其他题名论文其他题名
合作状况合作性质
收录类别SCI
语种英语
公开日期2012-10-21
源URL[http://ir.ciomp.ac.cn/handle/181722/25912]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Zhang X.,Zhang X.,Zhang X.. Infrared-laser-induced upconversion from Nd3+: LaF3 heteroepitaxial layers on CaF2(111) substrates by molecular beam epitaxy[J]. Physical Review B,2000,62(7):4446-4454.
APA Zhang X.,Zhang X.,&Zhang X..(2000).Infrared-laser-induced upconversion from Nd3+: LaF3 heteroepitaxial layers on CaF2(111) substrates by molecular beam epitaxy.Physical Review B,62(7),4446-4454.
MLA Zhang X.,et al."Infrared-laser-induced upconversion from Nd3+: LaF3 heteroepitaxial layers on CaF2(111) substrates by molecular beam epitaxy".Physical Review B 62.7(2000):4446-4454.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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