Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
文献类型：期刊论文
| 作者 | Jiang H. ; Song H.
|
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2011 |
| 卷号 | 509期号:24页码:6751-6755 |
| ISSN号 | 0925-8388 |
| 其他题名 | 论文其他题名 |
| 合作状况 | 合作性质 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 公开日期 | 2012-10-21 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/26074]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Jiang H.,Song H.. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method[J]. Journal of Alloys and Compounds,2011,509(24):6751-6755. |
| APA | Jiang H.,&Song H..(2011).Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method.Journal of Alloys and Compounds,509(24),6751-6755. |
| MLA | Jiang H.,et al."Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method".Journal of Alloys and Compounds 509.24(2011):6751-6755. |
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