中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The influence of processing gas on the mechanical properties of sputtered B–C–N–H films

文献类型:期刊论文

作者Zhang JY(张俊彦); Zhang JY(张俊彦); Yang SR(杨生荣)
刊名Applied Surface Science
出版日期2009
卷号255页码:8575-8581
关键词Boron carbon nitride Microstructure Hardness Residual stress Friction coefficient
ISSN号0169-4332
通讯作者张俊彦
中文摘要This work describes the microstructure and mechanical properties of B–C–N–H films synthesized by medium frequency magnetron sputtering from a boron target in a N2 +CH4 + Ar gas mixture. The increase in the CH4 flow rate increases the carbonaceous compound species, causes the increase of the C atomic concentration and promotes the formation of sp3 -hybridized carbon. The change of hardness with the CH4 flow rate had a relationship with the residual stress. The coefficient of friction was reduced approximately from 0.8 to 0.18, and wear resistance was considerably improved by increasing the flow of CH4 gas component from 0 to 40 sccm. The change of films’ hardness was discussed and attributed primarily to the internal defects and bonding characteristics,while the superior tribological properties of the films could be assigned to the formation of sp3 -hybridized carbon and the C–H bonding.
学科主题材料科学与物理化学
收录类别SCI
资助信息the 863 program of Chinese Ministry of Science and Technology with grant no. 2007A30Z338;National Science Foundation of China with grant no. 50721062
语种英语
公开日期2012-11-13
源URL[http://210.77.64.217/handle/362003/2009]  
专题兰州化学物理研究所_固体润滑国家重点实验室
通讯作者Zhang JY(张俊彦); Zhang JY(张俊彦)
推荐引用方式
GB/T 7714
Zhang JY,Zhang JY,Yang SR. The influence of processing gas on the mechanical properties of sputtered B–C–N–H films[J]. Applied Surface Science,2009,255:8575-8581.
APA 张俊彦,张俊彦,&杨生荣.(2009).The influence of processing gas on the mechanical properties of sputtered B–C–N–H films.Applied Surface Science,255,8575-8581.
MLA 张俊彦,et al."The influence of processing gas on the mechanical properties of sputtered B–C–N–H films".Applied Surface Science 255(2009):8575-8581.

入库方式: OAI收割

来源:兰州化学物理研究所

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