中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The synthesis of aligned silicon nanowires under ambient atmospheric pressure

文献类型:期刊论文

作者Zhang JY(张俊彦); Wan SH(万善宏); Zhang JY(张俊彦)
刊名Journal of Non-Crystalline Solids
出版日期2009
卷号355页码:518-520
关键词Amorphous semiconductors III–V Semiconductors Silicon Catalysis
ISSN号0022-3093
通讯作者张俊彦
中文摘要Highly ordered amorphous silicon nanowires were successfully synthesized from single crystalline silicon wafer at the pyrolysis temperature of 1050℃ under ambient atmospheric pressure. Both poly (phenylcarbyne) and nickel nitrate played important roles in the growth of silicon nanowires. The fabrication of ordered silicon nanowires was controllable and repeatable, confirmed by the experimental results. The morphology and microstructure analysis of the as-obtained samples showed the highly ordered amorphous silicon nanowires were obtained, determined by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and FT-infrared spectroscopy. A solid–liquid–solid growing process was proposed.
学科主题材料科学与物理化学
收录类别SCI
资助信息the National Natural Science Foundation of China (NSFC, Grant Nos. 50572108;50771225)
语种英语
WOS记录号WOS:000265504700011
公开日期2012-11-13
源URL[http://210.77.64.217/handle/362003/2077]  
专题兰州化学物理研究所_固体润滑国家重点实验室
通讯作者Zhang JY(张俊彦); Zhang JY(张俊彦)
推荐引用方式
GB/T 7714
Zhang JY,Wan SH,Zhang JY. The synthesis of aligned silicon nanowires under ambient atmospheric pressure[J]. Journal of Non-Crystalline Solids,2009,355:518-520.
APA 张俊彦,万善宏,&张俊彦.(2009).The synthesis of aligned silicon nanowires under ambient atmospheric pressure.Journal of Non-Crystalline Solids,355,518-520.
MLA 张俊彦,et al."The synthesis of aligned silicon nanowires under ambient atmospheric pressure".Journal of Non-Crystalline Solids 355(2009):518-520.

入库方式: OAI收割

来源:兰州化学物理研究所

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