中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Axial periodical nanostructures of Sb-doped SnO2 grown by chemical vapor deposition

文献类型:期刊论文

作者Chen JT(陈江涛)
刊名Physica E
出版日期2009
卷号41页码:1640-1644
关键词Axial periodical structures Depletion layer Photoluminescence
ISSN号1386-9477
通讯作者阎鹏勋
中文摘要We report the synthesis and characterization Sb-doped SnO2 nanowires by chemical vapor deposition (CVD) at 850 1C. The as-synthesized-doped nanowires showed unique periodical structures in contrast to the traditional nanowires with smooth surfaces. The fascinating structures lead to a much higher surface to volume ratio and greater changes of depletion layer volume after gas absorption, and the sensitivity of gas sensing devices may be improved by using axial periodical nanostructures, instead of ordinary one. The photoluminescence of the Sb-doped SnO2 nanostructures were measured. The doping of Sb atoms brings two new emission peaks at 561 and 670 nm.
学科主题材料科学与物理化学
收录类别SCI
语种英语
WOS记录号WOS:000270121000002
公开日期2012-11-13
源URL[http://210.77.64.217/handle/362003/2111]  
专题兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式
GB/T 7714
Chen JT. Axial periodical nanostructures of Sb-doped SnO2 grown by chemical vapor deposition[J]. Physica E,2009,41:1640-1644.
APA 陈江涛.(2009).Axial periodical nanostructures of Sb-doped SnO2 grown by chemical vapor deposition.Physica E,41,1640-1644.
MLA 陈江涛."Axial periodical nanostructures of Sb-doped SnO2 grown by chemical vapor deposition".Physica E 41(2009):1640-1644.

入库方式: OAI收割

来源:兰州化学物理研究所

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