Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
文献类型：期刊论文
| 作者 | Chen NF(陈诺夫)
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| 刊名 | 半导体学报
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| 出版日期 | 2010 |
| 卷号 | 31期号:8页码:084009 |
| 关键词 | Ⅲ-Ⅴsemiconductor photovoltaic tandem solar cell theoretical efficiency |
| 中文摘要 | We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%（300 suns,AM1.5d） for the optimal structure parameter（1550 nm GaInP top and 5500 nm GaInAs bottom）,showing promising application prospects due to its acceptable lattice-mismatch（0.43%） to the GaAs substrate. |
| 学科主题 | 微重力流体力学 |
| 语种 | 英语 |
| 公开日期 | 2012-11-30 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/45692]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Chen NF. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. 半导体学报,2010,31(8):084009. |
| APA | 陈诺夫.(2010).Design and optimization of a monolithic GaInP/GaInAs tandem solar cell.半导体学报,31(8),084009. |
| MLA | 陈诺夫."Design and optimization of a monolithic GaInP/GaInAs tandem solar cell".半导体学报 31.8(2010):084009. |
入库方式： OAI收割
来源：力学研究所
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