Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films
文献类型：期刊论文
| 作者 | Wang Ying; Hao Xihong; Xu Jinbao |
| 刊名 | Journal of Materials Research
 |
| 出版日期 | 2012 |
| 卷号 | 27期号:13页码:1770-1775 |
| ISSN号 | 8842914 |
| 中文摘要 | Two-micrometer-thick Pb0.97La0.02(Zr 0.98Ti0.02)O3 (PLZT) antiferroelectric films, with the addition of different PbO insert layer, were successfully fabricated on LaNiO3/Si substrates through a sol-gel method, and their microstructure and the energy storage performance were investigated in detail. X-ray diffraction curves and scanning electron microscopy images indicated that all the PLZT films showed a strong (042)-preferred orientation and had a uniform surface microstructure. The electrical measurements illustrated that the capacitive density and saturation polarization values of the thick films were improved by the PbO insert layer. As a result, PLZT thick films with 0.4-M/L PbO-insert layer possessed an enhanced energy storage density and energy storage efficiency, which were 25.2 J/cm3 and 52.3% measured at 984 kV/cm, respectively. Moreover, after 106 switching, the Jreco values of the corresponding films were only declined from 17.5 to 16.1 J/cm3, indicating good fatigue endurance. © 2012 Materials Research Society. |
| 学科主题 | Materials Science |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1365]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 |
| 作者单位 | Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Ying,Hao Xihong,Xu Jinbao. Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films[J]. Journal of Materials Research,2012,27(13):1770-1775. |
| APA | Wang Ying,Hao Xihong,&Xu Jinbao.(2012).Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films.Journal of Materials Research,27(13),1770-1775. |
| MLA | Wang Ying,et al."Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films".Journal of Materials Research 27.13(2012):1770-1775. |
入库方式： OAI收割
来源：新疆理化技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。