Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors
文献类型：期刊论文
| 作者 | Xi Shan-Bin; Lu Wu ; Wang Zhi-Kuan; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:7页码:- |
| 关键词 | subthreshold-current technique gate control lateral pnp bipolar transistor charge separation |
| ISSN号 | 1000-3290 |
| 中文摘要 | In this paper, we design and fabricate a new test structure of bipolar device. A gate is deposited on the oxide layer covering the base region of normal lateral pnp bipolar transistor. The characteristic of drain current (collector current) versus the gate voltage is recorded by sweeping the voltage applied to the gate, then the subthreshold-current technique is used to separate the radiation induced oxide trapped charges and interface traps in the gate controlled lateral pnp bipolar transistor during Co-60-gamma irradiation. The test structure and the measurement of the bipolar transistor used in the experiment are introduced in detail in this paper. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China 10975182 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1634]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 |
| 作者单位 | Xinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; State Key Lab Analog Integrated Circuit, Chongqing 400060, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xi Shan-Bin,Lu Wu,Wang Zhi-Kuan,et al. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(7):-. |
| APA | Xi Shan-Bin.,Lu Wu.,Wang Zhi-Kuan.,Ren Di-Yuan.,Zhou Dong.,...&Sun Jing.(2012).Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors.ACTA PHYSICA SINICA,61(7),-. |
| MLA | Xi Shan-Bin,et al."Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors".ACTA PHYSICA SINICA 61.7(2012):-. |
入库方式： OAI收割
来源：新疆理化技术研究所
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