research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
文献类型：期刊论文
| 作者 | Li Ming; Yu Xue-Feng ; Xue Yao-Guo; Lu Jian; Cui Jiang-Wei; Gao Bo
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:10页码:- |
| 关键词 | partial-depletion-silicon-on insulator static random access memory total-dose effects power supply current |
| ISSN号 | 1000-3290 |
| 英文摘要 | In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory (SRAM) is irradiated under different total doses. After the SOI SRAM is irradiated by the Co-60-gamma ray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000304976200045 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1629]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Ming,Yu Xue-Feng,Xue Yao-Guo,et al. research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory[J]. ACTA PHYSICA SINICA,2012,61(10):-. |
| APA | Li Ming,Yu Xue-Feng,Xue Yao-Guo,Lu Jian,Cui Jiang-Wei,&Gao Bo.(2012).research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory.ACTA PHYSICA SINICA,61(10),-. |
| MLA | Li Ming,et al."research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory".ACTA PHYSICA SINICA 61.10(2012):-. |
入库方式： OAI收割
来源：新疆理化技术研究所
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