RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS
文献类型：期刊论文
| 作者 | Cui Jiangwei; Yu Xuefeng ; Ren Diyuan
|
| 刊名 | INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:6页码:1409-1417 |
| 关键词 | SOI kink radiation |
| ISSN号 | 0218-3013 |
| 通讯作者 | Cui, JW |
| 英文摘要 | Relationship between the kink and radiation effects of SOI MOSFET is investigated. The experiment results show that radiation exposure can play an important role on the behavior of the kink. The mechanisms of both the kink and radiation effects are clearly illustrated and the way the radiation affects the behavior of the kink are described in detail |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000292644900004 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1658]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cui Jiangwei,Yu Xuefeng,Ren Diyuan. RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS,2011,20(6):1409-1417. |
| APA | Cui Jiangwei,Yu Xuefeng,&Ren Diyuan.(2011).RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS.INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS,20(6),1409-1417. |
| MLA | Cui Jiangwei,et al."RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS".INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS 20.6(2011):1409-1417. |
入库方式： OAI收割
来源：新疆理化技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。