Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
文献类型：期刊论文
| 作者 | Gao Bo; Yu Xue-Feng ; Ren Di-Yuan; Cui Jiang-Wei; Lan Bo; Li Ming; Wang Yi-Yuan
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2011 |
| 卷号 | 60期号:6 |
| 关键词 | p-type metal-oxide-semiconductor field-effect transistor Co-60 gamma-ray total-dose irradiation damage effects enhanced low dose rate sensitivity |
| ISSN号 | 1000-3290 |
| 通讯作者 | Yu, XF |
| 英文摘要 | In this paper, the ionizing damage effects and the annealing behaviors of an import producti, p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), an unhardened 4007 circuit under different doses are investigated. We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses. The dependence of the drift of threshold voltage on total dose is discussed. We also observe the relationship between the parameter and the annealing time. The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity (ELDRS) effect. The interface-trap formation by H(+) transmission in the SiO(2) is explained. We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET. We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000292017800122 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1659]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; Xinjiang Autonomous Reg Key Lab Elect Informat Ma, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao Bo,Yu Xue-Feng,Ren Di-Yuan,et al. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor[J]. ACTA PHYSICA SINICA,2011,60(6). |
| APA | Gao Bo.,Yu Xue-Feng.,Ren Di-Yuan.,Cui Jiang-Wei.,Lan Bo.,...&Wang Yi-Yuan.(2011).Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor.ACTA PHYSICA SINICA,60(6). |
| MLA | Gao Bo,et al."Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor".ACTA PHYSICA SINICA 60.6(2011). |
入库方式： OAI收割
来源：新疆理化技术研究所
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