Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors
文献类型：期刊论文
| 作者 | Lu Wu ; Zheng Yu-Zhan; Wang Yi-Yuan; Ren Di-Yuan; Guo Qi; Wang Zhi-Kuan; Wang Jian-An
|
| 刊名 | CHINESE PHYSICS C
 |
| 出版日期 | 2011 |
| 卷号 | 35期号:2页码:169-173 |
| 关键词 | NPN bipolar junction transistors (60)Co-gamma irradiation ELDRS orientation of substrate |
| ISSN号 | 1674-1137 |
| 通讯作者 | Lu, W |
| 英文摘要 | The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with < 111 > orientation was more sensitive to ionizing radiation than that with < 100 > orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000287274800012 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1671]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China;State Key Lab Analog Integrated Circuits, Chongqing 400060, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu Wu,Zheng Yu-Zhan,Wang Yi-Yuan,et al. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors[J]. CHINESE PHYSICS C,2011,35(2):169-173. |
| APA | Lu Wu.,Zheng Yu-Zhan.,Wang Yi-Yuan.,Ren Di-Yuan.,Guo Qi.,...&Wang Jian-An.(2011).Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors.CHINESE PHYSICS C,35(2),169-173. |
| MLA | Lu Wu,et al."Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors".CHINESE PHYSICS C 35.2(2011):169-173. |
入库方式： OAI收割
来源：新疆理化技术研究所
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