Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
文献类型：期刊论文
| 作者 | Bo Lan; Qi Guo ; Jing Sun; Jiangwei Cui; Maoshun Li; Rui Chen; Wuxiong Fei; Yun Zhao
|
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:5页码:0540041-0540044 |
| ISSN号 | 16744926 |
| 英文摘要 | The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates. |
| 收录类别 | EI |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1828]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Bo Lan,Qi Guo,Jing Sun,et al. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. Journal of Semiconductors,2010,31(5):0540041-0540044. |
| APA | Bo Lan.,Qi Guo.,Jing Sun.,Jiangwei Cui.,Maoshun Li.,...&Yun Zhao.(2010).Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions.Journal of Semiconductors,31(5),0540041-0540044. |
| MLA | Bo Lan,et al."Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions".Journal of Semiconductors 31.5(2010):0540041-0540044. |
入库方式： OAI收割
来源：新疆理化技术研究所
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