Radiation effect of NPN BJTs under various base doping conditions
文献类型：期刊论文
| 作者 | Xi Shan-Bin; Lu Wu ; Zheng Yu-Zhan; Xu Fa-Yue; Zhou Dong; Li Ming; Wang Fei; Wang Zhi-Kuan; Yang Yong-Hui
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| 刊名 | Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
 |
| 出版日期 | 2010 |
| 卷号 | 44期号:UPPL. 1页码:533-537 |
| ISSN号 | 10006931 |
| 英文摘要 | 60Co γ radiation effects and annealing behaviors of domestic NPN bipolar junction transistors with the same process technology but different base doping concentrations were investigated. It is shown that transistors with different base doping concentrations make the different responses of high and low dose rate radiation. More degradation can be seen in the lightly-doped base PNP transistors than the heavily-doped base PNP transistors. |
| 收录类别 | EI |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1832]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Acad. of Sci., Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of Chinese Acad. of Sci., Beijing 100049, China;National Key Laboratory of Analog Integrated Circuit, Chongqing 400060, China |
| 推荐引用方式 GB/T 7714 | Xi Shan-Bin,Lu Wu,Zheng Yu-Zhan,et al. Radiation effect of NPN BJTs under various base doping conditions[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2010,44(UPPL. 1):533-537. |
| APA | Xi Shan-Bin.,Lu Wu.,Zheng Yu-Zhan.,Xu Fa-Yue.,Zhou Dong.,...&Yang Yong-Hui.(2010).Radiation effect of NPN BJTs under various base doping conditions.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,44(UPPL. 1),533-537. |
| MLA | Xi Shan-Bin,et al."Radiation effect of NPN BJTs under various base doping conditions".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 44.UPPL. 1(2010):533-537. |
入库方式： OAI收割
来源：新疆理化技术研究所
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