Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
文献类型：期刊论文
| 作者 | Zheng Yu-Zhan; Lu Wu ; Ren Di-Yuan; Wang Yi-Yuan; Guo Qi; Yu Xue-Feng; He Cheng-Fa
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2009 |
| 卷号 | 58期号:8页码:5572-5577 |
| 关键词 | emitter area domestic npn transistors dose rate radiation damage |
| ISSN号 | 1000-3290 |
| 通讯作者 | Lu, W |
| 英文摘要 | There are many factors such as process technologies, dose rates and biased conditions which can affect radiation damage in npn transistors. High- and low-dose-rate radiation response of domestic npn transistors with three kinds of emitter areas were investigated in this article. The influence of emitter area on radiation damage was analyzed. The results show that the degradation of current gain was more severe at low dose rate, i.e. enhanced low-dose-rate sensitivity. Furthermore, radiation damage was more apparent at low current injection. Through the comparison of radiation damage for different emitter areas, it was found that greater peri meter-to-area ratio (P/A) would cause greater normalized excess base current (I(B)/I(BD)). The damage mechanism for npn transistors is explained in detail, and the radiation hardness assurance is explored with respect to the emitter area and operating voltage of npn transistors. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000269228600068 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1882]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas[J]. ACTA PHYSICA SINICA,2009,58(8):5572-5577. |
| APA | Zheng Yu-Zhan.,Lu Wu.,Ren Di-Yuan.,Wang Yi-Yuan.,Guo Qi.,...&He Cheng-Fa.(2009).Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas.ACTA PHYSICA SINICA,58(8),5572-5577. |
| MLA | Zheng Yu-Zhan,et al."Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas".ACTA PHYSICA SINICA 58.8(2009):5572-5577. |
入库方式： OAI收割
来源：新疆理化技术研究所
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