ELDRS and dose-rate dependence of vertical NPN transistor
文献类型：期刊论文
| 作者 | Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Gai-Li; Yu Xue-Feng; Guo Qi
|
| 刊名 | CHINESE PHYSICS C
 |
| 出版日期 | 2009 |
| 卷号 | 33期号:1页码:47-49 |
| 关键词 | bipolar junction transistor ELDRS effect dose-rate dependence |
| ISSN号 | 1674-1137 |
| 英文摘要 | The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that; the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO(2)-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000262408400010 |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1892]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China; Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. ELDRS and dose-rate dependence of vertical NPN transistor[J]. CHINESE PHYSICS C,2009,33(1):47-49. |
| APA | Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,Wang Gai-Li,Yu Xue-Feng,&Guo Qi.(2009).ELDRS and dose-rate dependence of vertical NPN transistor.CHINESE PHYSICS C,33(1),47-49. |
| MLA | Zheng Yu-Zhan,et al."ELDRS and dose-rate dependence of vertical NPN transistor".CHINESE PHYSICS C 33.1(2009):47-49. |
入库方式： OAI收割
来源：新疆理化技术研究所
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