Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
文献类型：期刊论文
| 作者 | Wang Gaili; Yu Xuefeng ; Ren Diyuan; Zheng Yuzhan; Sun Jing; Wen Lin
|
| 刊名 | He Jishu/Nuclear Techniques
 |
| 出版日期 | 2008 |
| 卷号 | 31期号:5页码:348-351 |
| ISSN号 | 2533219 |
| 英文摘要 | By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed. |
| 收录类别 | EI |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1938]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 固体辐射物理研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Urumqi 830011, China |
| 推荐引用方式 GB/T 7714 | Wang Gaili,Yu Xuefeng,Ren Diyuan,et al. Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. He Jishu/Nuclear Techniques,2008,31(5):348-351. |
| APA | Wang Gaili,Yu Xuefeng,Ren Diyuan,Zheng Yuzhan,Sun Jing,&Wen Lin.(2008).Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices.He Jishu/Nuclear Techniques,31(5),348-351. |
| MLA | Wang Gaili,et al."Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices".He Jishu/Nuclear Techniques 31.5(2008):348-351. |
入库方式： OAI收割
来源：新疆理化技术研究所
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