掺锰硅材料的电流振荡特性
文献类型：期刊论文
| 作者 | 陈朝阳 ; 巴维真; 张建; 丛秀云
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2006 |
| 卷号 | 27期号:9页码:1582-1585 |
| 关键词 | 硅 掺杂 补偿 电流振荡 |
| ISSN号 | 2534177 |
| 其他题名 | current oscillation properties of manganese-doped-silicon materials |
| 中文摘要 | 用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明在一定光照和电场范围内(276~305V/cm),电阻率为104Ω.cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大. |
| 英文摘要 | Compensated material Si:(B, Mn) is prepared by high temperature diffusion. The relation between the current oscillation parameters of this material and light intensity and electric field is studied. The experiment shows that: (1) In certain light intensity and electric field ranges (145-305 V/cm) the material Si:(B, Mn) with a resistivity of 104Ω·cm exhibits a current oscillation phenomenon at liquid nitrogen temperature; (2) At a certain electric field, the waveform of the current oscillation is stable and does not change with time; (3) The dependence relation between the oscillation frequency and light-intensity can be expressed by f = f0 (L/L0) α where L0 is the minimum light-intensity needed to stimulate oscillation, f0 is the frequency under L0, L is the intensity of the light, and α is a coefficient that increase with electric field; (4) The modulating coefficient K (K = (Imax-Imin)/Imax) decreases as the light increases; (5) The maximum value of the oscillation Imax decreases with the increase of the light-intensity while the minimum value of oscillation Imin increases slowly. |
| 公开日期 | 2012-11-29 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/1941]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 中国科学院新疆理化技术研究所；乌兹别克斯坦国立技术大学 |
| 推荐引用方式 GB/T 7714 | 陈朝阳,巴维真,张建,等. 掺锰硅材料的电流振荡特性[J]. 半导体学报,2006,27(9):1582-1585. |
| APA | 陈朝阳,巴维真,张建,&丛秀云.(2006).掺锰硅材料的电流振荡特性.半导体学报,27(9),1582-1585. |
| MLA | 陈朝阳,et al."掺锰硅材料的电流振荡特性".半导体学报 27.9(2006):1582-1585. |
入库方式： OAI收割
来源：新疆理化技术研究所
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