Effects of Al content on the properties of ZnO:Al films prepared by Al2O3 and ZnO co-sputtering
文献类型：期刊论文
| 作者 | Z. H. Deng, C. G. Huang, J. Q. Huang, M. L. Wang, H. He, H. Wang and Y. G. Cao |
| 刊名 | Journal of Materials Science-Materials in Electronics
 |
| 出版日期 | 2010-10 |
| 卷号 | 21期号:10页码:1030-1035 |
| 关键词 | zinc-oxide films doped zno thin-films electronic-properties optical-properties transparent temperature deposition devices |
| ISSN号 | 0957-4522 |
| 收录类别 | SCI |
| 原文出处 | http://www.springerlink.com/content/u3m5104rv356415g/fulltext.pdf |
| 语种 | 英语 |
| 公开日期 | 2012-11-02 |
| 源URL | [http://ir.fjirsm.ac.cn/handle/335002/2002]  |
| 专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
| 推荐引用方式 GB/T 7714 | Z. H. Deng, C. G. Huang, J. Q. Huang, M. L. Wang, H. He, H. Wang and Y. G. Cao. Effects of Al content on the properties of ZnO:Al films prepared by Al2O3 and ZnO co-sputtering[J]. Journal of Materials Science-Materials in Electronics,2010,21(10):1030-1035. |
| APA | Z. H. Deng, C. G. Huang, J. Q. Huang, M. L. Wang, H. He, H. Wang and Y. G. Cao.(2010).Effects of Al content on the properties of ZnO:Al films prepared by Al2O3 and ZnO co-sputtering.Journal of Materials Science-Materials in Electronics,21(10),1030-1035. |
| MLA | Z. H. Deng, C. G. Huang, J. Q. Huang, M. L. Wang, H. He, H. Wang and Y. G. Cao."Effects of Al content on the properties of ZnO:Al films prepared by Al2O3 and ZnO co-sputtering".Journal of Materials Science-Materials in Electronics 21.10(2010):1030-1035. |
入库方式： OAI收割
来源：福建物质结构研究所
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