Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering
文献类型：期刊论文
| 作者 | H. He, Y. G. Cao, R. L. Fu, H. Wang, J. Q. Huang, C. G. Huang, M. L. Wang and Z. H. Deng |
| 刊名 | Journal of Materials Science-Materials in Electronics
 |
| 出版日期 | 2010-07 |
| 卷号 | 21期号:7页码:676-681 |
| 关键词 | fundamental-band gap electronic-structure bragg mirrors thin-films epitaxy heterostructures absorption alxin1-xn alloys alinn |
| ISSN号 | 0957-4522 |
| 收录类别 | SCI |
| 原文出处 | http://www.springerlink.com/content/l333360810208294/fulltext.pdf |
| 语种 | 英语 |
| 公开日期 | 2012-11-02 |
| 源URL | [http://ir.fjirsm.ac.cn/handle/335002/2072]  |
| 专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
| 推荐引用方式 GB/T 7714 | H. He, Y. G. Cao, R. L. Fu, H. Wang, J. Q. Huang, C. G. Huang, M. L. Wang and Z. H. Deng. Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering[J]. Journal of Materials Science-Materials in Electronics,2010,21(7):676-681. |
| APA | H. He, Y. G. Cao, R. L. Fu, H. Wang, J. Q. Huang, C. G. Huang, M. L. Wang and Z. H. Deng.(2010).Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering.Journal of Materials Science-Materials in Electronics,21(7),676-681. |
| MLA | H. He, Y. G. Cao, R. L. Fu, H. Wang, J. Q. Huang, C. G. Huang, M. L. Wang and Z. H. Deng."Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering".Journal of Materials Science-Materials in Electronics 21.7(2010):676-681. |
入库方式： OAI收割
来源：福建物质结构研究所
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