Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films
文献类型:期刊论文
作者 | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. A. Liu, W. Guo and Q. F. Huang |
刊名 | Journal of Materials Science-Materials in Electronics
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出版日期 | 2010-11 |
卷号 | 21期号:11页码:1221-1227 |
关键词 | zno thin-films molecular-beam epitaxy organic solar-cells work function blue-shift band-gap temperature dependence devices surface |
ISSN号 | 0957-4522 |
收录类别 | SCI |
原文出处 | http://www.springerlink.com/content/f248950230625088/fulltext.pdf |
语种 | 英语 |
公开日期 | 2012-11-02 |
源URL | [http://ir.fjirsm.ac.cn/handle/335002/2100] ![]() |
专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
推荐引用方式 GB/T 7714 | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. A. Liu, W. Guo and Q. F. Huang. Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films[J]. Journal of Materials Science-Materials in Electronics,2010,21(11):1221-1227. |
APA | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. A. Liu, W. Guo and Q. F. Huang.(2010).Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films.Journal of Materials Science-Materials in Electronics,21(11),1221-1227. |
MLA | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. A. Liu, W. Guo and Q. F. Huang."Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films".Journal of Materials Science-Materials in Electronics 21.11(2010):1221-1227. |
入库方式: OAI收割
来源:福建物质结构研究所
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