Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering
文献类型:期刊论文
作者 | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang |
刊名 | Semiconductor Science and Technology
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出版日期 | 2010-04 |
卷号 | 25期号:4 |
关键词 | bias voltage optical-properties substrate zno alternatives dependence surface devices |
ISSN号 | 0268-1242 |
收录类别 | SCI |
原文出处 | http://iopscience.iop.org/0268-1242/25/4/045008/pdf/0268-1242_25_4_045008.pdf |
语种 | 英语 |
公开日期 | 2012-11-02 |
源URL | [http://ir.fjirsm.ac.cn/handle/335002/2102] ![]() |
专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
推荐引用方式 GB/T 7714 | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang. Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering[J]. Semiconductor Science and Technology,2010,25(4). |
APA | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang.(2010).Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering.Semiconductor Science and Technology,25(4). |
MLA | C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang."Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering".Semiconductor Science and Technology 25.4(2010). |
入库方式: OAI收割
来源:福建物质结构研究所
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