中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering

文献类型:期刊论文

作者C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang
刊名Semiconductor Science and Technology
出版日期2010-04
卷号25期号:4
关键词bias voltage optical-properties substrate zno alternatives dependence surface devices
ISSN号0268-1242
收录类别SCI
原文出处http://iopscience.iop.org/0268-1242/25/4/045008/pdf/0268-1242_25_4_045008.pdf
语种英语
公开日期2012-11-02
源URL[http://ir.fjirsm.ac.cn/handle/335002/2102]  
专题福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式
GB/T 7714
C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang. Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering[J]. Semiconductor Science and Technology,2010,25(4).
APA C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang.(2010).Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering.Semiconductor Science and Technology,25(4).
MLA C. G. Huang, M. L. Wang, Z. H. Deng, Y. G. Cao, Q. L. Liu, Z. Huang, Y. Liu, W. Guo and Q. F. Huang."Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering".Semiconductor Science and Technology 25.4(2010).

入库方式: OAI收割

来源:福建物质结构研究所

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