The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
文献类型：期刊论文
| 作者 | S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao |
| 刊名 | Physica E-Low-Dimensional Systems & Nanostructures
 |
| 出版日期 | 2009-09 |
| 卷号 | 41期号:9页码:1656-1660 |
| 关键词 | Indium segregation Optical gain Valence band structure Quantum well molecular-beam-epitaxy surface segregation lasers subbands parameters growth atoms gaas |
| ISSN号 | 1386-9477 |
| 收录类别 | SCI |
| 原文出处 | http://ac.els-cdn.com/S1386947709001726/1-s2.0-S1386947709001726-main.pdf?_tid=70c46992-26ec-11e2-ad49-00000aacb35e&acdnat=1352080952_4a8d46c6a30920a19916be6482bc5fdb |
| 语种 | 英语 |
| 公开日期 | 2012-11-06 |
| 源URL | [http://ir.fjirsm.ac.cn/handle/335002/3324]  |
| 专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
| 推荐引用方式 GB/T 7714 | S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao. The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells[J]. Physica E-Low-Dimensional Systems & Nanostructures,2009,41(9):1656-1660. |
| APA | S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao.(2009).The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells.Physica E-Low-Dimensional Systems & Nanostructures,41(9),1656-1660. |
| MLA | S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao."The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells".Physica E-Low-Dimensional Systems & Nanostructures 41.9(2009):1656-1660. |
入库方式： OAI收割
来源：福建物质结构研究所
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