The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells
文献类型：期刊论文
| 作者 | S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao |
| 刊名 | Superlattices and Microstructures
 |
| 出版日期 | 2009-10 |
| 卷号 | 46期号:4页码:618-626 |
| 关键词 | Indium segregation Transfer matrix method Exciton binding energy Exciton oscillator strength molecular-beam-epitaxy surface segregation electric-field ingaas layers growth atoms profile matrix |
| ISSN号 | 0749-6036 |
| 收录类别 | SCI |
| 原文出处 | http://ac.els-cdn.com/S0749603609001098/1-s2.0-S0749603609001098-main.pdf?_tid=6c4de262-26ec-11e2-8169-00000aab0f26&acdnat=1352080944_40d6f2e9d4dbb4ffce5e7b922349e7d0 |
| 语种 | 英语 |
| 公开日期 | 2012-11-06 |
| 源URL | [http://ir.fjirsm.ac.cn/handle/335002/3328]  |
| 专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
| 推荐引用方式 GB/T 7714 | S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao. The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells[J]. Superlattices and Microstructures,2009,46(4):618-626. |
| APA | S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao.(2009).The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells.Superlattices and Microstructures,46(4),618-626. |
| MLA | S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao."The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells".Superlattices and Microstructures 46.4(2009):618-626. |
入库方式： OAI收割
来源：福建物质结构研究所
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