Study on copper protrusion of through-silicon via in a 3-D integrated circuit
文献类型：期刊论文
| 作者 | Song M; Wei ZQ; Wang BY; Chen L ; Chen L; Szpunar JA
|
| 刊名 | MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
 |
| 出版日期 | 2019-05-07 |
| 卷号 | 755页码:66-74 |
| 关键词 | Through-silicon via Cu protrusion Annealing temperature Electron backscatter diffraction Finite element analysis |
| ISSN号 | 0921-5093 |
| DOI | 10.1016/j.msea.2019.03.130 |
| 通讯作者 | Song, Ming(songmingx@gmail.com) |
| 英文摘要 | The through-silicon via (TSV) approach is crucial for three-dimensional integrated circuit (3-D IC) packaging technology. However, there are still several challenges in the TSV fabrication process. One of the widely known challenges is via protrusion phenomenon. Annealing a TSV wafer makes the copper (Cu) TSVs under high stress and may form a protrusion where the Cu is extruded out of the TSV structure. The phenomenon occurs because of the large mismatch in the coefficient of thermal expansion between Cu via and silicon (Si) layer. Cu protrusion is able to cause crack, delamination of the back-end-of-line and short circuit of the chip, thus, it is a dangerous threat to the metal layer interconnect. Experiments are conducted to characterize the protrusion using several techniques. Scanning electron microscope is used to observe the protrusion topography and measure the height. Electron backscatter diffraction (EBSD) technique is implemented to study the grain size distribution, local texture and microstructure evolution inside Cu vias. For the experiment, arrays of 10 mu m diameter TSVs are fabricated and annealed in argon gas environment in six different temperatures. In this paper, finite element analysis (FEA) is carried out to study the Cu protrusion under different annealing conditions. Correlation between numerical results and experimental data is then performed. Based on the verified FEA methodology, several parametric studies are then conducted, including the effects of annealing temperature on Cu protrusion, residual stress distributions of TSV structures. The simulation results are helpful to understand and solve the key problem in TSV fabrication process and reliability challenge. |
| 分类号 | 一类 |
| WOS关键词 | BONDED COMPLIANT SEAL ; RESIDUAL-STRESSES ; DESIGN ; TSV ; RELIABILITY ; VIAS |
| 资助项目 | National Natural Science Foundation of China[51805543] ; Natural Science Foundation of Shandong Province of China[ZR2017BEE037] ; Fundamental Research and Application Funds of Qingdao City[16-5-1-47-jch] ; Fundamental Research Funds for the Central Universities[15CX02112A] ; Fundamental Research Funds for the Central Universities[18CX05002A] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000467669000008 |
| 资助机构 | National Natural Science Foundation of China ; Natural Science Foundation of Shandong Province of China ; Fundamental Research and Application Funds of Qingdao City ; Fundamental Research Funds for the Central Universities |
| 其他责任者 | Song, Ming |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/80699]  |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Song M,Wei ZQ,Wang BY,et al. Study on copper protrusion of through-silicon via in a 3-D integrated circuit[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,2019,755:66-74. |
| APA | Song M,Wei ZQ,Wang BY,Chen L,Chen L,&Szpunar JA.(2019).Study on copper protrusion of through-silicon via in a 3-D integrated circuit.MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,755,66-74. |
| MLA | Song M,et al."Study on copper protrusion of through-silicon via in a 3-D integrated circuit".MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 755(2019):66-74. |
入库方式： OAI收割
来源：力学研究所
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