Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
文献类型：期刊论文
| 作者 | He, G; Zhu, LQ; Sun, ZQ; Wan, Q; Zhang, LD |
| 刊名 | PROGRESS IN MATERIALS SCIENCE
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 56期号:5 |
| 学科主题 | 纳米材料与技术 |
| WOS记录号 | WOS:000288927600001 |
| 公开日期 | 2012-07-11 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/6178]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 推荐引用方式 GB/T 7714 | He, G,Zhu, LQ,Sun, ZQ,et al. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology[J]. PROGRESS IN MATERIALS SCIENCE,2011,56(5). |
| APA | He, G,Zhu, LQ,Sun, ZQ,Wan, Q,&Zhang, LD.(2011).Integrations and challenges of novel high-k gate stacks in advanced CMOS technology.PROGRESS IN MATERIALS SCIENCE,56(5). |
| MLA | He, G,et al."Integrations and challenges of novel high-k gate stacks in advanced CMOS technology".PROGRESS IN MATERIALS SCIENCE 56.5(2011). |
入库方式： OAI收割
来源：合肥物质科学研究院
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