Electro-optical device with III-V gain materials and integrated heat sink
文献类型：专利
| 作者 | CAER, CHARLES; HAHN, HERWIG |
| 发表日期 | 2019-04-09 |
| 专利号 | US10256603 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Electro-optical device with III-V gain materials and integrated heat sink |
| 英文摘要 | An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation. |
| 公开日期 | 2019-04-09 |
| 申请日期 | 2017-11-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/32360]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | CAER, CHARLES,HAHN, HERWIG. Electro-optical device with III-V gain materials and integrated heat sink. US10256603. 2019-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。