GaNFET as energy store for fast laser pulser
文献类型：专利
| 作者 | GASSEND, BLAISE; DROZ, PIERRE-YVES |
| 发表日期 | 2019-04-09 |
| 专利号 | US10256605 |
| 著作权人 | WAYMO LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | GaNFET as energy store for fast laser pulser |
| 英文摘要 | The present disclosure relates to systems and circuits that may facilitate sub-5 nanosecond laser diode operation. An example system includes a trigger source, a laser diode, a first field effect transistor and a second field effect transistor. The laser diode is coupled to a supply voltage and a drain terminal of the first field effect transistor. A source terminal of the first field effect transistor is coupled to ground and a gate terminal of the first field effect transistor is coupled to the trigger source. A drain terminal of the second field effect transistor is coupled to the supply voltage. A source terminal of the second field effect transistor and a gate terminal of the second field effect transistor are coupled to ground. In an example embodiment, the first field effect transistor and the second field effect transistor comprise gallium nitride (GaN). |
| 公开日期 | 2019-04-09 |
| 申请日期 | 2017-11-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/32363]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WAYMO LLC |
| 推荐引用方式 GB/T 7714 | GASSEND, BLAISE,DROZ, PIERRE-YVES. GaNFET as energy store for fast laser pulser. US10256605. 2019-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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