中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fast axis beam profile shaping for high power laser diode based annealing system

文献类型:专利

作者JENNINGS, DEAN; MAYUR, ABHILASH J.; THOMAS, TIMOTHY N.; PARIHAR, VIJAY; ACHUTHARAMAN, VEDAPURAM S.; THAKUR, RANDHIR P. S.
发表日期2012-10-16
专利号US8288683
著作权人APPLIED MATERIALS, INC.
国家美国
文献子类授权发明
其他题名Fast axis beam profile shaping for high power laser diode based annealing system
英文摘要A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.
公开日期2012-10-16
申请日期2008-11-04
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/32747]  
专题半导体激光器专利数据库
作者单位APPLIED MATERIALS, INC.
推荐引用方式
GB/T 7714
JENNINGS, DEAN,MAYUR, ABHILASH J.,THOMAS, TIMOTHY N.,et al. Fast axis beam profile shaping for high power laser diode based annealing system. US8288683. 2012-10-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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