半導体レーザの出力制御装置
文献类型：专利
| 作者 | 千間 俊孝; 今村 友厚; 島田 和之 |
| 发表日期 | 1997-05-16 |
| 专利号 | JP2649528B2 |
| 著作权人 | 株式会社リコー |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの出力制御装置 |
| 英文摘要 | PURPOSE:To perform output control at a low cost with high accuracy, by controlling the output of a semiconductor laser after dividing control in two stages by using two sets of low-priced D/A converters. CONSTITUTION:A laser beam outgone by a semiconductor laser 10 in the rear is converted into a voltage by an amplifier 13. Its voltage impressed into a comparator 14 as a voltage value VM and is compared with a reference voltage Vref The count output of a counter 15 is converted into an analog signal by the first D/A converter 8 and is impressed into an LD driver circuit 11 through an adder 20. The output strength of the semiconductor laser 10 is set approximately to a reference value P which is set through the reference voltage Vref At the same time, the counter 25 converts its output into the analog signal by the second D/A converter depending upon whether the output situation of the comparator 14 comes to an L level or an H level. Then, its signal is impressed to the LD drive circuit 11 through the adder 20 and it makes the intensity of laser beam vary. |
| 公开日期 | 1997-09-03 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社リコー |
| 推荐引用方式 GB/T 7714 | 千間 俊孝,今村 友厚,島田 和之. 半導体レーザの出力制御装置. JP2649528B2. 1997-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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