半導体レーザ制御回路
文献类型：专利
| 作者 | 小石 健二; 久保田 真司; 石橋 謙三 |
| 发表日期 | 1997-02-13 |
| 专利号 | JP2605375B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ制御回路 |
| 英文摘要 | PURPOSE:To prevent the erroneous detection of a peak value in a pulse waveform and to execute the abnormal detection with high reliability by generating a comparing voltage with using a reference voltage value to execute power setting at the time of DC light emission and pulse modulation, latching a comparing output in timing when optical power control is stabilized and executing the abnormal detection. CONSTITUTION:In a DC light emitting mode, an optical power control part 4 drives a current source 8 in correspondence to a reference voltage VR3 which executes the power setting to a third optical power value and controls the optical power value of a semiconductor laser In a pulse modulating mode optical power is controlled according to a first reference voltage VR1 which sets the optical power value of the peak value in the optical pulse waveform and a second reference voltage VR2 which sets the optical power value of a bottom value. The peak power value of the pulse modulating mode is detected by peak power light emission check timing 30, in which the transient response time of peak power control lapses and the peak power value is stabilized, in the rear half part of a peak power sample control block 28. Thus, even in the DC light emitting mode and pulse modulating mode, a normal light emitting level or an abnormal light emitting level can be exactly detected. |
| 公开日期 | 1997-04-30 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33321]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 小石 健二,久保田 真司,石橋 謙三. 半導体レーザ制御回路. JP2605375B2. 1997-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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