半導体レーザ制御装置
文献类型：专利
| 作者 | 江間 秀利; 高橋 浩 |
| 发表日期 | 1998-10-16 |
| 专利号 | JP2840275B2 |
| 著作权人 | 株式会社リコー |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ制御装置 |
| 英文摘要 | PURPOSE:To perform high resolution in high accuracy at a high speed by controlling a semiconductor laser with a current of the sum or difference of a control current of an optoelectric negative feedback loop, and a current generated by converting means. CONSTITUTION:A light emitting level command signal is input to a comparison amplifier 1 and a current converter 2, and part of the optical output of a driven semiconductor laser 3 is monitored by a photodetector 4. A differential amplifier 19 made of transistors 15, 16, a current source 17 and a bias voltage source 17, the amplifier 1, the laser 3 and the photodetector 4 constitute an optoelectric negative feedback loop. The amplifier 1 compares a photodetection signal proportional to a photovoltaic current induced at the photodetector 4 with the light emitting level command. The forward current of the laser 3 is so controlled through the amplifier 19 according to the result that a photodetection signal becomes equal to the light emitting level command signal. Thus, a high resolution can be preformed in high accuracy at a high speed. |
| 公开日期 | 1998-12-24 |
| 申请日期 | 1989-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33334]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社リコー |
| 推荐引用方式 GB/T 7714 | 江間 秀利,高橋 浩. 半導体レーザ制御装置. JP2840275B2. 1998-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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