面入出力半導体レーザメモリ
文献类型：专利
| 作者 | 斎藤 秀穂 |
| 发表日期 | 1998-05-01 |
| 专利号 | JP2775470B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面入出力半導体レーザメモリ |
| 英文摘要 | PURPOSE:To simultaneously perform optical signal processings in parallel by making light incident on a surface from an approximately perpendicular direction and emitting light from the surface to the approximately perpendicular direction. CONSTITUTION:A laser end face 12 is formed perpendicularly to a stripe active area 11 and a p-n junction plane, and an oblique reflection mirror 13 inclined at 40 to 60 deg. to the p-n junction plane is formed in the vicinity of the laser end face 12, thus controlling an element. External incident light 15 approximately perpendicular to the p-n junction plane is reflected by a reflection mirror and is made incident on a base layer 3 of the stripe active area 11 from the laser end face 12, and output light 16 of a laser is reflected to the oblique reflection face 13 and is emitted in the direction approximately perpendicular to the p-n junction plane. Many elements are monolithically arranged in a two-dimensional array on one substrate to perform optical signal processings essential to the parallel optical signal processing system in parallel synchronously with each other. |
| 公开日期 | 1998-07-16 |
| 申请日期 | 1989-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33338]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 斎藤 秀穂. 面入出力半導体レーザメモリ. JP2775470B2. 1998-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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