Bonding method for electric element
文献类型：专利
| 作者 | YUJI, KIMURA; KINYA, ATSUMI; KATSUNORI, ABE; NORIYUKI, MATSUSHITA; MICHIYO, MIZUTANI; TETSUO, TOYAMA; YUJI, , KIMURA; KINYA, , ATSUMI; KATSUNORI, , ABE; NORIYUKI, , MATSUSHITA |
| 发表日期 | 1998-02-25 |
| 专利号 | GB2300375B |
| 著作权人 | NIPPONDENSO CO LTD |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bonding method for electric element |
| 英文摘要 | A method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and a Sn-containing solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500?? or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved. |
| 公开日期 | 1998-02-25 |
| 申请日期 | 1995-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPONDENSO CO LTD |
| 推荐引用方式 GB/T 7714 | YUJI, KIMURA,KINYA, ATSUMI,KATSUNORI, ABE,et al. Bonding method for electric element. GB2300375B. 1998-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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