Multiple wavelength semiconductor laser device array and production method
文献类型：专利
| 作者 | KIKUCHI, KENICHI |
| 发表日期 | 2003-02-18 |
| 专利号 | US6522678 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multiple wavelength semiconductor laser device array and production method |
| 英文摘要 | The present invention provides a multiple wavelength semiconductor laser device array having approximately the same optical output levels of inducing kink and COD. The multiple wavelength semiconductor laser device array has the same construction as that of a conventional two-wavelength semiconductor laser device array except the thickness of the reflection films at the light emitting end faces. The thickness of the reflection films deposited on the light emitting end faces of the two-wavelength semiconductor laser device array is determined so as to have a lower reflectivity at a light emitting end face of a 650 nm band semiconductor laser device consisting of an AlGaInP type four-element compound semiconductor which may induce kink and COD more easily, than a reflectivity at a light emitting end face of a 780 nm band semiconductor laser device consisting of an AlGaAs type three-element compound semiconductor. |
| 公开日期 | 2003-02-18 |
| 申请日期 | 2001-02-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33723]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | KIKUCHI, KENICHI. Multiple wavelength semiconductor laser device array and production method. US6522678. 2003-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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