Laser processing method
文献类型：专利
| 作者 | ZHANG, HONGYONG |
| 发表日期 | 2010-09-14 |
| 专利号 | USR41690 |
| 著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser processing method |
| 英文摘要 | Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize the processing. To achieve a pulse width exceeding 30 nsec, plural lasers are connected in series or in parallel and excited successively. |
| 公开日期 | 2010-09-14 |
| 申请日期 | 2001-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33733]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 推荐引用方式 GB/T 7714 | ZHANG, HONGYONG. Laser processing method. USR41690. 2010-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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