Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same
文献类型：专利
| 作者 | TSUDA, YUHZOH; ITO, SHIGETOSHI |
| 发表日期 | 2003-07-01 |
| 专利号 | US6586779 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
| 英文摘要 | There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer. |
| 公开日期 | 2003-07-01 |
| 申请日期 | 2002-04-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33794]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TSUDA, YUHZOH,ITO, SHIGETOSHI. Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same. US6586779. 2003-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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